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Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Identifieur interne : 001D38 ( Main/Repository ); précédent : 001D37; suivant : 001D39

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Auteurs : RBID : Pascal:12-0407626

Descripteurs français

Pascal (Inist)
- Phonon, Dopage modulé, Mobilité dérive, Mobilité électron, Epaisseur couche, Vitesse dérive, Diffusion électron, Densité électron, Composé binaire, Indium Arséniure, Composé ternaire, Gallium Arséniure, Puits quantique semiconducteur, Arséniure d'indium, Arséniure de gallium, Puits quantique, Couche épaisse, InAs, As In, As Ga In, 7363H, InGaAs.

English descriptors

KwdEn :
- Binary compounds, Drift mobility, Drift velocity, Electron density, Electron mobility, Electron scattering, Gallium Arsenides, Gallium arsenides, Indium Arsenides, Indium arsenides, Layer thickness, Modulation doping, Phonons, Quantum wells, Semiconductor quantum wells, Ternary compounds, Thick films.

Abstract

The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5-2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8 - 2) x 10⁷ cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4 x 10¹² cm^-2 in the QW.

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Pascal:12-0407626

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier</title>
<author><name sortKey="Pozela, K" uniqKey="Pozela K">K. Pozela</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1>
<s2>Vilnius 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Silenas, A" uniqKey="Silenas A">A. Silenas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1>
<s2>Vilnius 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pozela, J" uniqKey="Pozela J">J. Pozela</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1>
<s2>Vilnius 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Juciene, V" uniqKey="Juciene V">V. Juciene</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1>
<s2>Vilnius 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Galiev, G B" uniqKey="Galiev G">G. B. Galiev</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences</s1>
<s2>Moscow 117105</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Vasil Evskii, J S" uniqKey="Vasil Evskii J">J. S. Vasil Evskii</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>MEPHI National Nuclear Research University</s1>
<s2>Moscow 115409</s2>
<s3>RUS</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Klimov, E A" uniqKey="Klimov E">E. A. Klimov</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences</s1>
<s2>Moscow 117105</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<placeName><settlement type="city">Moscou</settlement>
<region>District fédéral central</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0407626</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0407626 INIST</idno>
<idno type="RBID">Pascal:12-0407626</idno>
<idno type="wicri:Area/Main/Corpus">001713</idno>
<idno type="wicri:Area/Main/Repository">001D38</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0947-8396</idno>
<title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title>
<title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Drift mobility</term>
<term>Drift velocity</term>
<term>Electron density</term>
<term>Electron mobility</term>
<term>Electron scattering</term>
<term>Gallium Arsenides</term>
<term>Gallium arsenides</term>
<term>Indium Arsenides</term>
<term>Indium arsenides</term>
<term>Layer thickness</term>
<term>Modulation doping</term>
<term>Phonons</term>
<term>Quantum wells</term>
<term>Semiconductor quantum wells</term>
<term>Ternary compounds</term>
<term>Thick films</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Phonon</term>
<term>Dopage modulé</term>
<term>Mobilité dérive</term>
<term>Mobilité électron</term>
<term>Epaisseur couche</term>
<term>Vitesse dérive</term>
<term>Diffusion électron</term>
<term>Densité électron</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Puits quantique semiconducteur</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Puits quantique</term>
<term>Couche épaisse</term>
<term>InAs</term>
<term>As In</term>
<term>As Ga In</term>
<term>7363H</term>
<term>InGaAs</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5-2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8 - 2) x 10<sup>7</sup>
 cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4 x 10<sup>12</sup>
 cm<sup>-2</sup>
 in the QW.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0>
</fA01>
<fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0>
</fA03>
<fA05><s2>109</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>POZELA (K.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SILENAS (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>POZELA (J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>JUCIENE (V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>GALIEV (G. B.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>VASIL'EVSKII (J. S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KLIMOV (E. A.)</s1>
</fA11>
<fA14 i1="01"><s1>Semiconductor Physics Institute, Center for Physical Sciences and Technology</s1>
<s2>Vilnius 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>MEPHI National Nuclear Research University</s1>
<s2>Moscow 115409</s2>
<s3>RUS</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences</s1>
<s2>Moscow 117105</s2>
<s3>RUS</s3>
<sZ>5 aut.</sZ>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>233-237</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16194A</s2>
<s5>354000502033230350</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>12 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0407626</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer inserted in the center of the QW is theoretically predicted and experimentally observed. The electron mobility enhancement by a factor of 1.5-2 takes place when the 4 nm-thick InAs layer is inserted into the 17 nm-width QW. The experimental maximal value of the electron drift velocity at the threshold electric field for intervalley electron scattering achieves (1.8 - 2) x 10<sup>7</sup>
 cm/s and does not nearly depend on the thickness of the InAs insert. The high value of maximal drift velocity is conserved at the additional doping of the InAs insert up to electron density of 4 x 10<sup>12</sup>
 cm<sup>-2</sup>
 in the QW.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C63H</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Phonon</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Phonons</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dopage modulé</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Modulation doping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Doping modulado</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Mobilité dérive</s0>
<s5>41</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Drift mobility</s0>
<s5>41</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Movilidad deriva</s0>
<s5>41</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s5>42</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Electron mobility</s0>
<s5>42</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>43</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>43</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>43</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Vitesse dérive</s0>
<s5>44</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Drift velocity</s0>
<s5>44</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Diffusion électron</s0>
<s5>45</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Electron scattering</s0>
<s5>45</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Difusión electrón</s0>
<s5>45</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Densité électron</s0>
<s5>46</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electron density</s0>
<s5>46</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>62</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>62</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>64</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>64</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Couche épaisse</s0>
<s5>65</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Thick films</s0>
<s5>65</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>As In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7363H</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>317</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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